jmnic product specification silicon pnp power transistors 2SB1165 description ? ? with to-126 package ? complement to type 2sd1722 ? low collector saturation voltage ? fast switching time applications ? for use in relay drivers,high-speed inverters,converters. pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -5 a i cm collector current-peak -8 a t a =25 ?? 1.2 p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SB1165 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = ?t -50 v v (br)cbo collector-base breakdown voltage i c =-10 | a ;i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-10 | a ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.15a -0.28 -0.55 v v besat base-emitter saturation voltage i c =-3a; i b =-0.15a -0.95 -1.3 v i cbo collector cut-off current v cb =-40v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 | a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 70 400 h fe-2 dc current gain i c =-4a ; v ce =-2v 35 f t transition fre quency i c =-1a ; v ce =-5v 130 mhz c ob collector output capacitance i e =0; f=1mhz ; v cb =-10v 60 pf switching times t on turn-on time 50 ns t stg storage time 450 ns tf fall time i c =-2a; i b1 =-i b2 =-0.2a v cc =25v 20 ns ? h fe-1 classifications q r s t 70-140 100-200 140-280 200-400
jmnic product specification 3 silicon pnp power transistors 2SB1165 package outline fig.2 outline dimensions
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